Physical analysis of barrier-inhomogeneity effects on the electrical parameters of GaN Schottky barrier diodes

  1. Peña,R.A.
  2. Orfao,B.
  3. Paz-Martínez,G.
  4. Sánchez-Martín,H.
  5. Mateos,J.
  6. González,T.
  7. Vasallo,B.G.
  8. Pérez,S.
Journal:
Journal of Physics D: Applied Physics

ISSN: 1361-6463,  0022-3727

Year of publication: 2026

Volume: 59

Issue: 1

Type: Article

DOI: 10.1088/1361-6463/AE233D GOOGLE SCHOLAR lock_openOpen access editor