Influence of Al mole fraction on the noise performance of GaAs/AlxGa1-xas HEMT's

  1. Mateos, J.
  2. Pardo, D.
  3. Gonzalez, T.
  4. Tadyszak, P.
  5. Danneville, F.
  6. Cappy, A.
Journal:
IEEE Transactions on Electron Devices

ISSN: 0018-9383

Year of publication: 1998

Volume: 45

Issue: 9

Pages: 2081-2083

Type: Article

DOI: 10.1109/16.711380 GOOGLE SCHOLAR
Data source: Scopus