Numerical and experimental study of a 0.25 μm fully-depleted silicon-on-insulator MOSFET: Static and dynamic radio-frequency behaviour

  1. Rengel, R.
  2. Mateos, J.
  3. Pardo, D.
  4. González, T.
  5. Martín, M.J.
  6. Dambrine, G.
  7. Danneville, F.
  8. Raskin, J.-P.
Journal:
Semiconductor Science and Technology

ISSN: 0268-1242

Year of publication: 2002

Volume: 17

Issue: 11

Pages: 1149-1156

Type: Article

DOI: 10.1088/0268-1242/17/11/303 GOOGLE SCHOLAR
Data source: Scopus