Monte Carlo study of kink effect in short-channel InAlAs/InGaAs high electron mobility transistors

  1. Vasallo, B.G.
  2. Mateos, J.
  3. Pardo, D.
  4. González, T.
Revue:
Journal of Applied Physics

ISSN: 0021-8979

Année de publication: 2003

Volumen: 94

Número: 6

Pages: 4096-4101

Type: Article

DOI: 10.1063/1.1603955 GOOGLE SCHOLAR