100nm InAlAs/InGaAs double-gate HEMT using transferred substrate
- Wichmann, N.
- Duszynski, I.
- Bollaert, S.
- Mateos, J.
- Wallart, X.
- Cappy, A.
Proceedings:
Technical Digest - International Electron Devices Meeting, IEDM
ISSN: 0163-1918
Year of publication: 2004
Pages: 1023-1026
Type: Conference paper