Dynamic threshold mode operation of p-channel Si and strained-SiGe MOSFETs between 10 K and 300 K
- Gaspari, V.
- Fobelets, K.
- Velazquez-Perez, J.E.
- Prest, M.J.
- Whall, T.E.
Zeitschrift:
Semiconductor Science and Technology
ISSN: 0268-1242
Datum der Publikation: 2004
Ausgabe: 19
Nummer: 9
Art: Artikel