A Monte Carlo model for the study of n-type strained Silicon Schottky diodes

  1. Galeote, J.M.
  2. Rengel, R.
  3. Pascual, E.
  4. Martín, M.J.
Actes de conférence:
Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011

ISBN: 9781424478637

Année de publication: 2011

Type: Communication dans un congrès

DOI: 10.1109/SCED.2011.5744166 GOOGLE SCHOLAR
La source de données: Scopus