Kink effect and noise performance in isolated-gate InAs/AlSb high electron mobility transistors

  1. Vasallo, B.G.
  2. Rodilla, H.
  3. González, T.
  4. Moschetti, G.
  5. Grahn, J.
  6. Mateos, J.
Journal:
Semiconductor Science and Technology

ISSN: 0268-1242,  1361-6641

Year of publication: 2012

Volume: 27

Issue: 6

Type: Article

DOI: 10.1088/0268-1242/27/6/065018 GOOGLE SCHOLAR
Data source: Scopus