Effect of the dopant segregation layer on the static characteristics of Schottky-barrier n-MOSFETs

  1. Couso, C.
  2. Pascual, E.
  3. Galeote, J.M.
  4. Martin, M.J.
  5. Rengel, R.
Actes de conférence:
2012 8th International Caribbean Conference on Devices, Circuits and Systems, ICCDCS 2012

ISBN: 9781457711169

Année de publication: 2012

Type: Communication dans un congrès

DOI: 10.1109/ICCDCS.2012.6188919 GOOGLE SCHOLAR