Impact of substrate and thermal boundary resistance on the performance of AlGaN/GaN HEMTs analyzed by means of electro-thermal Monte Carlo simulations

  1. García, S.
  2. Ñiguez-De-La-Torre, I.
  3. Mateos, J.
  4. González, T.
  5. Pérez, S.
Zeitschrift:
Semiconductor Science and Technology

ISSN: 1361-6641,  0268-1242

Datum der Publikation: 2016

Ausgabe: 31

Nummer: 6

Art: Artikel

DOI: 10.1088/0268-1242/31/6/065005 GOOGLE SCHOLAR
Datenquelle: Scopus