Damping of acoustic flexural phonons in silicene: Influence on high-field electronic transport

  1. Rengel, R.
  2. Iglesias, J.M.
  3. Hamham, E.M.
  4. Martín, M.J.
Zeitschrift:
Semiconductor Science and Technology

ISSN: 1361-6641 0268-1242

Datum der Publikation: 2018

Ausgabe: 33

Nummer: 6

Art: Artikel

DOI: 10.1088/1361-6641/AAC0A2 GOOGLE SCHOLAR