Trap-related frequency dispersion of zero-bias microwave responsivity at low temperature in GaN-based self-switching diodes

  1. Pérez-Martín, E.
  2. González, T.
  3. Vaquero, D.
  4. Sánchez-Martín, H.
  5. Gaquière, C.
  6. Raposo, V.J.
  7. Mateos, J.
  8. Iñiguez-de-la-Torre, I.
Journal:
Nanotechnology

ISSN: 1361-6528

Year of publication: 2020

Volume: 31

Issue: 40

Pages: 405204

Type: Article

DOI: 10.1088/1361-6528/AB9D44 GOOGLE SCHOLAR