Logic Gates Based on Synthetic Antiferromagnetic Bilayer Skyrmions

  1. Fattouhi, M.
  2. Mak, K.Y.
  3. Zhou, Y.
  4. Zhang, X.
  5. Liu, X.
  6. El Hafidi, M.
Aldizkaria:
Physical Review Applied

ISSN: 2331-7019

Argitalpen urtea: 2021

Alea: 16

Zenbakia: 1

Mota: Artikulua

DOI: 10.1103/PHYSREVAPPLIED.16.014040 GOOGLE SCHOLAR