Effect of gallium doping on structural and transport properties of the topological insulator Bi2Se3grown by molecular beam epitaxy

  1. Brito, D.
  2. Pérez-Rodriguez, A.
  3. Khatri, I.
  4. Tavares, C.J.
  5. Amado, M.
  6. Castro, E.
  7. Diez, E.
  8. Sadewasser, S.
  9. Claro, M.S.
Aldizkaria:
Journal of Applied Physics

ISSN: 1089-7550,  0021-8979

Argitalpen urtea: 2022

Alea: 132

Zenbakia: 11

Mota: Artikulua

DOI: 10.1063/5.0107004 GOOGLE SCHOLAR lock_openSarbide irekia editor
Datuen iturria: Scopus