0.12 mu m gate length In(0.52)Al(0.48)AS/In0.53Ga0.47As HEMTs on transferred substrate
- Bollaert, S
- Wallart, X
- Lepilliet, S
- Cappy, A
- Jalaguier, E
- Pocas, S
- Aspar, B
- Mateos, J
- Arakawa, Y (coord.)
- Hirayama, Y (coord.)
- Kishino, K (coord.)
- Yamaguchi, H (coord.)
ISSN: 0951-3248
ISBN: 0-7503-0856-7
Year of publication: 2002
Pages: 101-105
Congress: 28th International Symposium on Compound Semiconductors (ISCS 2001)
Type: Conference paper