NANODISPOSITIVOS ELECTRÓNICOS DE ALTA FRECUENCIA
Nanyang Technological University
Singapur, SingapurPublications en collaboration avec des chercheurs de Nanyang Technological University (4)
2023
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On the Practical Limitations for the Generation of Gunn Oscillations in Highly Doped GaN Diodes
IEEE Transactions on Electron Devices, Vol. 70, Núm. 7, pp. 3447-3453
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THz Oscillation in Doped-GaN Based Planar Gunn Diode with the T-shape Channel
2023 18th European Microwave Integrated Circuits Conference, EuMIC 2023
2019
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Design and fabrication of planar gunn nanodiodes based on doped GaN
Asia-Pacific Microwave Conference Proceedings, APMC
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GaN-based SSD structure for THz applications
Asia-Pacific Microwave Conference Proceedings, APMC