GRUPO DE NANOTECNOLOGÍA
Institute of Electronics, Microelectronics and Nanotechnology
Villeneuve-d'Ascq, FranciaPublicaciones en colaboración con investigadores/as de Institute of Electronics, Microelectronics and Nanotechnology (3)
2015
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Broadband characteristics of ultrahigh responsivity of asymmetric dual-grating-gate plasmonic terahertz detectors
IRMMW-THz 2015 - 40th International Conference on Infrared, Millimeter, and Terahertz Waves
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Room-temperature zero-bias plasmonic THz detection by asymmetric dual-grating-gate HEMT
Proceedings of SPIE - The International Society for Optical Engineering
2014
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Ultrahigh sensitive sub- Terahertz detection by InP-based asymmetric dual-grating-gate high-electron-mobility transistors and their broadband characteristics
Applied Physics Letters, Vol. 104, Núm. 25