GRUPO DE NANOTECNOLOGÍA
Georgia Institute of Technology
Atlanta, Estados UnidosPublicacións en colaboración con investigadores/as de Georgia Institute of Technology (3)
2018
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Anomalously large resistance at the charge neutrality point in a zero-gap InAs/GaSb bilayer
New Journal of Physics, Vol. 20, Núm. 5
2010
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Effect of a magnetic field on the two-phonon Raman scattering in graphene
Physical Review B - Condensed Matter and Materials Physics, Vol. 81, Núm. 15
2009
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Tuning the electron-phonon coupling in multilayer graphene with magnetic fields
Physical Review Letters, Vol. 103, Núm. 18