GRUPO DE NANOTECNOLOGÍA
Centre National de la Recherche Scientifique
París, FranciaPublicacións en colaboración con investigadores/as de Centre National de la Recherche Scientifique (21)
2021
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Detection of the Faraday Chiral Anisotropy
Physical Review Letters, Vol. 126, Núm. 17
2015
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Broadband Characteristics of Ultrahigh Responsivity of Asymmetric Dual-Grating-Gate Plasmonic Terahertz Detectors
2015 40TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER AND TERAHERTZ WAVES (IRMMW-THZ)
2013
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Extremely-High Sensitive Terahertz Detector based on Dual-Grating Gate InP-HEMTs
2013 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM)
2012
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Quantum Hall effect in bilayer and trilayer graphene
Physica Status Solidi (C) Current Topics in Solid State Physics, Vol. 9, Núm. 6, pp. 1411-1414
2011
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Optical probing of the metal-to-insulator transition in a two-dimensional high-mobility electron gas
New Journal of Physics, Vol. 13
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Plasmonic terahertz detection by a double-grating-gate field-effect transistor structure with an asymmetric unit cell
Applied Physics Letters, Vol. 99, Núm. 24
2010
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AlGaN/GaN high electron mobility transistors as a voltage-tunable room temperature terahertz sources
Journal of Applied Physics, Vol. 107, Núm. 2
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Detection of high power THz radiation by GaAs High Electron Mobility and Si Field Effect Transistors
IRMMW-THz 2010 - 35th International Conference on Infrared, Millimeter, and Terahertz Waves, Conference Guide
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Detection of high power THz radiation by GaAs High Electron Mobility and Si Field Effect Transistors
35TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ 2010)
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Effect of a magnetic field on the two-phonon Raman scattering in graphene
Physical Review B - Condensed Matter and Materials Physics, Vol. 81, Núm. 15
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Tunable room temperature THz emission from AlGaN/GaN high electron mobility transistors
35TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ 2010)
2009
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Effects of repulsive and attractive ionized impurities on the resistivity of semiconductor heterostructures in the quantum Hall regime
Physical Review B - Condensed Matter and Materials Physics, Vol. 80, Núm. 19
2008
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Room temperature generation of terahertz radiation from dual grating gate HEMT's
2008 33RD INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER AND TERAHERTZ WAVES, VOLS 1 AND 2
2007
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Nonlinear dependence of the magnetophotoluminescence energies of asymmetric GaAs/Ga0.67 Al0.33 As quantum wells on an external magnetic field
Physical Review B - Condensed Matter and Materials Physics, Vol. 75, Núm. 24
2005
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TeraHertz detectors based on plasma oscillations in nanometric silicon field effect transistors
Physica Status Solidi C: Conferences
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Terahertz emission and detection by plasma waves in nanoscale transistors
PHYSICS OF SEMICONDUCTORS, PTS A AND B
2004
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1/f Noise in GaN/AlGaN heterostructure field-effect transistors in high magnetic fields at 300 K
Journal of Applied Physics, Vol. 96, Núm. 7, pp. 3845-3847
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Behavior of the contacts of quantum hall effect devices at high currents
Journal of Applied Physics, Vol. 96, Núm. 1, pp. 404-410
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Plasma wave detection of sub-terahertz and terahertz radiation by silicon field-effect transistors
Applied Physics Letters, Vol. 85, Núm. 4, pp. 675-677
2003
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Discrete states of conduction electrons bound to magnetoacceptors in quantum wells
Physical Review B - Condensed Matter and Materials Physics, Vol. 68, Núm. 16