Sergio
García Sánchez
Profesor Permanente Laboral
Ignacio
Íñiguez de la Torre Mulas
Profesor Titular de Universidad
Publications by the researcher in collaboration with Ignacio Íñiguez de la Torre Mulas (15)
2023
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High-Frequency Microwave Detection With GaN HEMTs in the Subthreshold Regime
IEEE Transactions on Microwave Theory and Techniques
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On the Practical Limitations for the Generation of Gunn Oscillations in Highly Doped GaN Diodes
IEEE Transactions on Electron Devices, Vol. 70, Núm. 7, pp. 3447-3453
2022
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Monte Carlo analysis of thermal effects in the DC and AC performance of AlGaN/GaN HEMTs
Solid-State Electronics, Vol. 193
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Optimization of the Epilayer Design for the Fabrication of Doped GaN Planar Gunn Diodes
IEEE Transactions on Electron Devices, Vol. 69, Núm. 2, pp. 514-520
2021
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Non-linear thermal resistance model for the simulation of high power GaN-based devices
Semiconductor Science and Technology, Vol. 36, Núm. 5
2019
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Design and fabrication of planar gunn nanodiodes based on doped GaN
Asia-Pacific Microwave Conference Proceedings, APMC
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GaN-based SSD structure for THz applications
Asia-Pacific Microwave Conference Proceedings, APMC
2016
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Impact of substrate and thermal boundary resistance on the performance of AlGaN/GaN HEMTs analyzed by means of electro-thermal Monte Carlo simulations
Semiconductor Science and Technology, Vol. 31, Núm. 6
2015
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Evaluation of the thermal resistance in GaN-diodes by means of electro-thermal Monte Carlo simulations
Proceedings of the 2015 10th Spanish Conference on Electron Devices, CDE 2015
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Modelling of thermal boundary resistance in a GaN diode by means of electro-thermal Monte Carlo simulations
Journal of Physics: Conference Series
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Self-consistent electro-thermal simulations of AlGaN/GaN diodes by means of Monte Carlo method
Semiconductor Science and Technology, Vol. 30, Núm. 3
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Temperature and Surface Traps Influence on the THz Emission from InGaAs Diodes
Journal of Physics: Conference Series
2014
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Comparative Monte Carlo analysis of InP- and GaN-based Gunn diodes
Journal of Applied Physics, Vol. 115, Núm. 4
2013
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Modelado matemático para la generación de un mallado espacial con aplicación anano-estructuras semiconductoras
Avances en Informática y Automática. Séptimo Workshop (Departamento de Informática y Automática), pp. 73-92
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Numerical study of sub-millimeter Gunn oscillations in InP and GaN vertical diodes: Dependence on bias, doping, and length
Journal of Applied Physics, Vol. 114, Núm. 7