Ignacio
Íñiguez de la Torre Mulas
Profesor Titular de Universidad
Chalmers University of Technology
Gotemburgo, SueciaPublicaciones en colaboración con investigadores/as de Chalmers University of Technology (8)
2015
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Erratum: On the effect of δ-doping in self-switching diodes (Applied Physics Letters (2014) 105 (093505))
Applied Physics Letters
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Optimization and small-signal modeling of zero-bias InAs self-switching diode detectors
Solid-State Electronics, Vol. 104, pp. 79-85
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Phonon black-body radiation limit for heat dissipation in electronics
Nature Materials, Vol. 14, Núm. 2, pp. 187-192
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Temperature and Surface Traps Influence on the THz Emission from InGaAs Diodes
Journal of Physics: Conference Series
2014
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On the effect of δ-doping in self-switching diodes
Applied Physics Letters, Vol. 105, Núm. 9
2013
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200 GHz communication system using unipolar InAs THz rectifiers
International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz
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Room temperature THz detection and emission with semiconductor nanodevices
Proceedings of the 2013 Spanish Conference on Electron Devices, CDE 2013
2012
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Monte Carlo studies of the intrinsic time-domain response of nanoscale three-branch junctions
Journal of Applied Physics, Vol. 111, Núm. 8