Publicaciones en colaboración con investigadores/as de Chalmers University of Technology (8)

2015

  1. Erratum: On the effect of δ-doping in self-switching diodes (Applied Physics Letters (2014) 105 (093505))

    Applied Physics Letters

  2. Optimization and small-signal modeling of zero-bias InAs self-switching diode detectors

    Solid-State Electronics, Vol. 104, pp. 79-85

  3. Phonon black-body radiation limit for heat dissipation in electronics

    Nature Materials, Vol. 14, Núm. 2, pp. 187-192

  4. Temperature and Surface Traps Influence on the THz Emission from InGaAs Diodes

    Journal of Physics: Conference Series

2014

  1. On the effect of δ-doping in self-switching diodes

    Applied Physics Letters, Vol. 105, Núm. 9

2013

  1. 200 GHz communication system using unipolar InAs THz rectifiers

    International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz

  2. Room temperature THz detection and emission with semiconductor nanodevices

    Proceedings of the 2013 Spanish Conference on Electron Devices, CDE 2013

2012

  1. Monte Carlo studies of the intrinsic time-domain response of nanoscale three-branch junctions

    Journal of Applied Physics, Vol. 111, Núm. 8