Publicaciones en colaboración con investigadores/as de Centre National de la Recherche Scientifique (17)

2015

  1. Broadband Characteristics of Ultrahigh Responsivity of Asymmetric Dual-Grating-Gate Plasmonic Terahertz Detectors

    2015 40TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER AND TERAHERTZ WAVES (IRMMW-THZ)

2013

  1. Extremely-High Sensitive Terahertz Detector based on Dual-Grating Gate InP-HEMTs

    2013 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM)

2011

  1. Plasmonic terahertz detection by a double-grating-gate field-effect transistor structure with an asymmetric unit cell

    Applied Physics Letters, Vol. 99, Núm. 24

2010

  1. AlGaN/GaN high electron mobility transistors as a voltage-tunable room temperature terahertz sources

    Journal of Applied Physics, Vol. 107, Núm. 2

  2. Detection of high power THz radiation by GaAs High Electron Mobility and Si Field Effect Transistors

    IRMMW-THz 2010 - 35th International Conference on Infrared, Millimeter, and Terahertz Waves, Conference Guide

  3. Detection of high power THz radiation by GaAs High Electron Mobility and Si Field Effect Transistors

    35TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ 2010)

  4. Tunable room temperature THz emission from AlGaN/GaN high electron mobility transistors

    35TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ 2010)

2009

  1. Effects of repulsive and attractive ionized impurities on the resistivity of semiconductor heterostructures in the quantum Hall regime

    Physical Review B - Condensed Matter and Materials Physics, Vol. 80, Núm. 19

2008

  1. Room temperature generation of terahertz radiation from dual grating gate HEMT's

    2008 33RD INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER AND TERAHERTZ WAVES, VOLS 1 AND 2

2007

  1. Nonlinear dependence of the magnetophotoluminescence energies of asymmetric GaAs/Ga0.67 Al0.33 As quantum wells on an external magnetic field

    Physical Review B - Condensed Matter and Materials Physics, Vol. 75, Núm. 24

2005

  1. TeraHertz detectors based on plasma oscillations in nanometric silicon field effect transistors

    Physica Status Solidi C: Conferences

  2. Terahertz emission and detection by plasma waves in nanoscale transistors

    PHYSICS OF SEMICONDUCTORS, PTS A AND B

2004

  1. 1/f Noise in GaN/AlGaN heterostructure field-effect transistors in high magnetic fields at 300 K

    Journal of Applied Physics, Vol. 96, Núm. 7, pp. 3845-3847

  2. Behavior of the contacts of quantum hall effect devices at high currents

    Journal of Applied Physics, Vol. 96, Núm. 1, pp. 404-410

  3. Plasma wave detection of sub-terahertz and terahertz radiation by silicon field-effect transistors

    Applied Physics Letters, Vol. 85, Núm. 4, pp. 675-677

2003

  1. Discrete states of conduction electrons bound to magnetoacceptors in quantum wells

    Physical Review B - Condensed Matter and Materials Physics, Vol. 68, Núm. 16

  2. Inter and intra Landau level scatterings as a mechanism for the onset of the voltage drop across the contact at high currents in the quantum Hall effect regime

    Semiconductor Science and Technology, Vol. 18, Núm. 11, pp. 983-991