Simulation of electron transport in silicon: Impact-ionization processes

  1. Martin, M.J.
  2. Gonzalez, T.
  3. Velazquez, J.E.
  4. Pardo, D.
Revue:
Semiconductor Science and Technology

ISSN: 0268-1242

Année de publication: 1993

Volumen: 8

Número: 7

Pages: 1291-1297

Type: Article

DOI: 10.1088/0268-1242/8/7/017 GOOGLE SCHOLAR
La source de données: Scopus