Improved monte carlo algorithm for the simulation of doped ahnas/galnas hemt's

  1. Mateos, J.
  2. Gonzalez, T.
  3. Pardo, D.
  4. Hoel, V.
  5. Happy, H.
  6. Cappy, A.
Revue:
IEEE Transactions on Electron Devices

ISSN: 0018-9383

Année de publication: 2000

Volumen: 47

Número: 1

Pages: 250-253

Type: Article

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La source de données: Scopus