Dynamic threshold mode operation of p-channel Si and strained-SiGe MOSFETs between 10 K and 300 K

  1. Gaspari, V.
  2. Fobelets, K.
  3. Velazquez-Perez, J.E.
  4. Prest, M.J.
  5. Whall, T.E.
Journal:
Semiconductor Science and Technology

ISSN: 0268-1242

Year of publication: 2004

Volume: 19

Issue: 9

Type: Article

DOI: 10.1088/0268-1242/19/9/L01 GOOGLE SCHOLAR

Sustainable development goals

Data source: Scopus