2D ensemble Monte Carlo modelling of bulk and FD SOI MOSFETs: Active layer thickness and noise performance

  1. Rengel, R.
  2. Pardo, D.
  3. Martín-Martínez, M.J.
Revue:
Semiconductor Science and Technology

ISSN: 0268-1242

Année de publication: 2004

Volumen: 19

Número: 4 SPEC. ISS.

Type: Communication dans un congrès

DOI: 10.1088/0268-1242/19/4/068 GOOGLE SCHOLAR
La source de données: Scopus