Sensitivity of single-and double-gate MOS architectures to residual discrete dopant distribution in the channel

  1. Dollfus, P.
  2. Bournel, A.
  3. Velázquez, J.E.
Revue:
Journal of Computational Electronics

ISSN: 1572-8137,  1569-8025

Année de publication: 2006

Volumen: 5

Número: 2-3

Pages: 119-123

Type: Article

DOI: 10.1007/S10825-006-8830-5 GOOGLE SCHOLAR
La source de données: Scopus