Monte Carlo study of kink effect in isolated-gate InAs/AlSb high electron mobility transistors
- Vasallo, B.G.
- Rodilla, H.
- González, T.
- Moschetti, G.
- Grahn, J.
- Mateos, J.
Journal:
Journal of Applied Physics
ISSN: 0021-8979
Year of publication: 2010
Volume: 108
Issue: 9
Type: Article