Monte Carlo study of kink effect in isolated-gate InAs/AlSb high electron mobility transistors
- Vasallo, B.G.
- Rodilla, H.
- González, T.
- Moschetti, G.
- Grahn, J.
- Mateos, J.
Revue:
Journal of Applied Physics
ISSN: 0021-8979
Année de publication: 2010
Volumen: 108
Número: 9
Type: Article