Monte Carlo study of kink effect in isolated-gate InAs/AlSb high electron mobility transistors

  1. Vasallo, B.G.
  2. Rodilla, H.
  3. González, T.
  4. Moschetti, G.
  5. Grahn, J.
  6. Mateos, J.
Revue:
Journal of Applied Physics

ISSN: 0021-8979

Année de publication: 2010

Volumen: 108

Número: 9

Type: Article

DOI: 10.1063/1.3503430 GOOGLE SCHOLAR