Strained silicon modulation field-effect transistor as a new sensor of terahertz radiation

  1. Meziani, Y.M.
  2. Garcia, E.
  3. Velazquez, E.
  4. Diez, E.
  5. El Moutaouakil, A.
  6. Otsuji, T.
  7. Fobelets, K.
Journal:
Semiconductor Science and Technology

ISSN: 0268-1242,  1361-6641

Year of publication: 2011

Volume: 26

Issue: 10

Type: Article

DOI: 10.1088/0268-1242/26/10/105006 GOOGLE SCHOLAR
Data source: Scopus