Ultrahigh sensitive sub- Terahertz detection by InP-based asymmetric dual-grating-gate high-electron-mobility transistors and their broadband characteristics

  1. Kurita, Y.
  2. Ducoumau, G.
  3. Coquillat, D.
  4. Satou, A.
  5. Kobayashi, K.
  6. Tombet, S.B.
  7. Meziani, Y.M.
  8. Popov, V.V.
  9. Knap, W.
  10. Suemitsu, T.
  11. Otsuji, T.
Zeitschrift:
Applied Physics Letters

ISSN: 0003-6951

Datum der Publikation: 2014

Ausgabe: 104

Nummer: 25

Art: Artikel

DOI: 10.1063/1.4885499 GOOGLE SCHOLAR