Monte Carlo model for the analysis and development of III-V Tunnel-FETs and Impact Ionization-MOSFETs

  1. Talbo, V.
  2. Mateos, J.
  3. González, T.
  4. Lechaux, Y.
  5. Wichmann, N.
  6. Bollaert, S.
  7. Vasallo, B.G.
Proceedings:
Journal of Physics: Conference Series

ISSN: 1742-6596 1742-6588

Year of publication: 2015

Volume: 647

Issue: 1

Type: Conference paper

DOI: 10.1088/1742-6596/647/1/012056 GOOGLE SCHOLAR lock_openOpen access editor

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