Monte Carlo model for the analysis and development of III-V Tunnel-FETs and Impact Ionization-MOSFETs
- Talbo, V.
- Mateos, J.
- González, T.
- Lechaux, Y.
- Wichmann, N.
- Bollaert, S.
- Vasallo, B.G.
ISSN: 1742-6596, 1742-6588
Year of publication: 2015
Volume: 647
Issue: 1
Type: Conference paper