Monte Carlo model for the analysis and development of III-V Tunnel-FETs and Impact Ionization-MOSFETs

  1. Talbo, V.
  2. Mateos, J.
  3. González, T.
  4. Lechaux, Y.
  5. Wichmann, N.
  6. Bollaert, S.
  7. Vasallo, B.G.
Aktak:
Journal of Physics: Conference Series

ISSN: 1742-6596,  1742-6588

Argitalpen urtea: 2015

Alea: 647

Zenbakia: 1

Mota: Biltzar ekarpena

DOI: 10.1088/1742-6596/647/1/012056 GOOGLE SCHOLAR lock_openSarbide irekia editor
Datuen iturria: Scopus