Scaling of graphene field-effect transistors supported on hexagonal boron nitride: Radio-frequency stability as a limiting factor

  1. Feijoo, P.C.
  2. Pasadas, F.
  3. Iglesias, J.M.
  4. Martin, M.J.
  5. Rengel, R.
  6. Li, C.
  7. Kim, W.
  8. Riikonen, J.
  9. Lipsanen, H.
  10. Jiménez, D.
Revista:
Nanotechnology

ISSN: 1361-6528 0957-4484

Any de publicació: 2017

Volum: 28

Número: 48

Tipus: Article

DOI: 10.1088/1361-6528/AA9094 GOOGLE SCHOLAR