Scaling of graphene field-effect transistors supported on hexagonal boron nitride: Radio-frequency stability as a limiting factor

  1. Feijoo, P.C.
  2. Pasadas, F.
  3. Iglesias, J.M.
  4. Martin, M.J.
  5. Rengel, R.
  6. Li, C.
  7. Kim, W.
  8. Riikonen, J.
  9. Lipsanen, H.
  10. Jiménez, D.
Revista:
Nanotechnology

ISSN: 1361-6528 0957-4484

Ano de publicación: 2017

Volume: 28

Número: 48

Tipo: Artigo

DOI: 10.1088/1361-6528/AA9094 GOOGLE SCHOLAR