Impact ionization and band-to-band tunneling in InxGa1-xAs PIN ungated devices: A Monte Carlo analysis

  1. Vasallo, B.G.
  2. González, T.
  3. Talbo, V.
  4. Lechaux, Y.
  5. Wichmann, N.
  6. Bollaert, S.
  7. Mateos, J.
Aldizkaria:
Journal of Applied Physics

ISSN: 1089-7550,  0021-8979

Argitalpen urtea: 2018

Alea: 123

Zenbakia: 3

Mota: Artikulua

DOI: 10.1063/1.5007858 GOOGLE SCHOLAR
Datuen iturria: Scopus