Nonlinear electron properties of an InGaAs/InAlAs-based ballistic deflection transistor: Room temperature DC experiments and numerical simulations

  1. Kaushal, V.
  2. Iñiguez-De-La-Torre, I.
  3. Margala, M.
Journal:
Solid-State Electronics

ISSN: 0038-1101

Year of publication: 2011

Volume: 56

Issue: 1

Pages: 120-129

Type: Article

DOI: 10.1016/J.SSE.2010.11.018 GOOGLE SCHOLAR
Data source: Scopus