Nonlinear electron properties of an InGaAs/InAlAs-based ballistic deflection transistor: Room temperature DC experiments and numerical simulations

  1. Kaushal, V.
  2. Iñiguez-De-La-Torre, I.
  3. Margala, M.
Revue:
Solid-State Electronics

ISSN: 0038-1101

Année de publication: 2011

Volumen: 56

Número: 1

Pages: 120-129

Type: Article

DOI: 10.1016/J.SSE.2010.11.018 GOOGLE SCHOLAR
La source de données: Scopus