Analysis of trap states in AlGaN/GaN self-switching diodes via impedance measurements

  1. Pérez-Martín, E.
  2. Vaquero, D.
  3. Sánchez-Martín, H.
  4. Gaquière, C.
  5. Raposo, V.J.
  6. González, T.
  7. Mateos, J.
  8. Iñiguez-de-la-Torre, I.
Journal:
Microelectronics Reliability

ISSN: 0026-2714

Year of publication: 2020

Volume: 114

Type: Article

DOI: 10.1016/J.MICROREL.2020.113806 GOOGLE SCHOLAR

Sustainable development goals

Data source: Scopus