Comparison of GaN and InGaAs high electron mobility transistors as zero-bias microwave detectors

1. Paz-Martínez, G.
2. Íñiguez-De-La-Torre, I.
3. Sánchez-Martín, H.
4. García-Vasallo, B.
5. Wichmann, N.
6. González, T.
7. Mateos, J.

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DOI: 10.1063/5.0111114 GOOGLE SCHOLAR lock_openOpen access editor

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