GRUPO DE NANOTECNOLOGÍA
University of Paris-Sud
Orsay, FranciaUniversity of Paris-Sud-ko ikertzaileekin lankidetzan egindako argitalpenak (1)
2006
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Sensitivity of single-and double-gate MOS architectures to residual discrete dopant distribution in the channel
Journal of Computational Electronics, Vol. 5, Núm. 2-3, pp. 119-123