BEATRIZ
ORFAO E VALE TABERNERO
Investigador Predoctoral
Institute of Electronics, Microelectronics and Nanotechnology
Villeneuve-d'Ascq, FranciaPublicaciones en colaboración con investigadores/as de Institute of Electronics, Microelectronics and Nanotechnology (2)
2022
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Analysis of the low temperature behavior of GaN-on-SiC Schottky barrier diodes
32nd International Symposium of Space Terahertz Technology, ISSTT 2022
2021
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Technological Parameters and Edge Fringing Capacitance in GaN Schottky Barrier Diodes: Monte Carlo Simulations
Proceedings of the 2021 13th Spanish Conference on Electron Devices, CDE 2021