BEATRIZ
ORFAO E VALE TABERNERO
Researcher in the period 2019-2023


Institute of Electronics, Microelectronics and Nanotechnology
Villeneuve-d'Ascq, Francia
Publications in collaboration with researchers from Institute of Electronics, Microelectronics and Nanotechnology (3)
2024
-
Reverse Leakage Current Hysteresis in GaN Schottky Barrier Diodes Interpreted in Terms of a Trap Energy Band
IEEE Transactions on Electron Devices, Vol. 71, Núm. 8, pp. 4524-4529
2022
-
Analysis of the low temperature behavior of GaN-on-SiC Schottky barrier diodes
32nd International Symposium of Space Terahertz Technology, ISSTT 2022
2021
-
Technological Parameters and Edge Fringing Capacitance in GaN Schottky Barrier Diodes: Monte Carlo Simulations
Proceedings of the 2021 13th Spanish Conference on Electron Devices, CDE 2021