Publikationen (15) Publikationen von JORGE QUEREDA BERNABEU

2024

  1. Low-Cost and Biodegradable Thermoelectric Devices Based on van der Waals Semiconductors on Paper Substrates

    Energy and Environmental Materials, Vol. 7, Núm. 1

  2. Polarization-tuneable excitonic spectral features in the optoelectronic response of atomically thin ReS2

    2D Materials, Vol. 11, Núm. 1

2022

  1. An ultraminiaturized spectrometer

    Science (New York, N.Y.), Vol. 378, Núm. 6617, pp. 250-251

  2. Excitons surf the waves

    Nature Photonics

  3. Fiber-coupled light-emitting diodes (LEDs) as safe and convenient light sources for the characterization of optoelectronic devices

    Open Research Europe, Vol. 1

  4. Scalable and low-cost fabrication of flexible WS2 photodetectors on polycarbonate

    npj Flexible Electronics, Vol. 6, Núm. 1

  5. Stretching ReS2along different crystal directions: Anisotropic tuning of the vibrational and optical responses

    Applied Physics Letters, Vol. 120, Núm. 6

  6. The Low-Temperature Photocurrent Spectrum of Monolayer MoSe2: Excitonic Features and Gate Voltage Dependence

    Nanomaterials, Vol. 12, Núm. 3

  7. Van der Waals heterostructures

    Nature Reviews Methods Primers, Vol. 2, Núm. 1

2021

  1. Fast response photogating in monolayer MoS2phototransistors

    Nanoscale, Vol. 13, Núm. 38, pp. 16156-16163

  2. Ionic-Liquid Gating in Two-Dimensional TMDs: The Operation Principles and Spectroscopic Capabilities

    Micromachines, Vol. 12, Núm. 12

  3. The role of device asymmetries and Schottky barriers on the helicity-dependent photoresponse of 2D phototransistors

    npj 2D Materials and Applications, Vol. 5, Núm. 1

2020

  1. Excitons, trions and Rydberg states in monolayer MoS2 revealed by low-temperature photocurrent spectroscopy

    Communications Physics, Vol. 3, Núm. 1

2019

  1. Bilayer h-BN barriers for tunneling contacts in fully-encapsulated monolayer MoSe2 field-effect transistors

    2D Materials, Vol. 6, Núm. 1

  2. Semiconductor channel-mediated photodoping in h-BN encapsulated monolayer MoSe2 phototransistors

    2D Materials, Vol. 6, Núm. 2