Ignacio Íñiguez de la Torre Mulas-rekin lankidetzan egindako argitalpenak (9)

2024

  1. Influence of Surface States in AlGaN/GaN Nanodiodes Analyzed by Preconditioned Transient Current Measurements

    IEEE Transactions on Microwave Theory and Techniques

  2. Small-signal equivalent circuit model of GaN-based nanodiodes at low temperature including trap-related low frequency dispersion

    Journal of Applied Physics, Vol. 135, Núm. 4

2023

  1. Current and voltage responsivity up to 110 GHz in GaN asymmetric nano-diodes

    Applied Physics Letters, Vol. 123, Núm. 12

  2. Low temperature memory effects in AlGaN/GaN nanochannels

    Applied Physics Letters, Vol. 123, Núm. 10

  3. Trap-assisted enhancement of the responsivity in asymmetric planar GaN-based nanodiodes at low temperature

    Nanotechnology, Vol. 34, Núm. 32

2021

  1. Bias-dependence of surface charge at low temperature in GaN Self-Switching Diodes

    Proceedings of the 2021 13th Spanish Conference on Electron Devices, CDE 2021

  2. Monte Carlo analysis of the influence of surface charges on GaN asymmetric nanochannels: Bias and temperature dependence

    Journal of Applied Physics, Vol. 130, Núm. 10

2020

  1. Analysis of trap states in AlGaN/GaN self-switching diodes via impedance measurements

    Microelectronics Reliability, Vol. 114

  2. Trap-related frequency dispersion of zero-bias microwave responsivity at low temperature in GaN-based self-switching diodes

    Nanotechnology, Vol. 31, Núm. 40, pp. 405204