Publikationen (30) Publikationen von Sergio García Sánchez

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2025

  1. Avoiding avalanche breakdown in planar GaN Gunn diodes by means of a substrate contact

    Journal of Physics D: Applied Physics, Vol. 58, Núm. 1

  2. Monte Carlo Analysis of DC-AC Conversion Efficiency in Highly Doped Planar GaN Gunn Diodes: Effects of Applied Bias, Doping Level, and Temperature

    IEEE Transactions on Electron Devices

  3. Monte Carlo Analysis of DC-AC Conversion Efficiency in Highly Doped Planar GaN Gunn Diodes: Effects of Applied Bias, Doping Level, and Temperature

    IEEE Transactions on Electron Devices, Vol. 72, Núm. 4, pp. 1644-1649

2024

  1. Analysis of mm-Wave Detection with AlGaN/GaN HEMTs by means of Measurements and Physical and Equivalent Circuit Models

    2024 19th European Microwave Integrated Circuits Conference, EuMIC 2024

  2. Analysis of the THz Responsivity of AlGaN/GaN HEMTs by Means of Monte Carlo Simulations

    IEEE Transactions on Electron Devices, Vol. 71, Núm. 8, pp. 4556-4562

  3. Guidelines for Overcoming the Practical Limitations for the Fabrication of THz Sources with GaN Planar Gunn Diodes

    IEEE Electron Devices Technology and Manufacturing Conference: Strengthening the Globalization in Semiconductors, EDTM 2024

  4. High-Frequency Microwave Detection with GaN HEMTs in the Subthreshold Regime

    IEEE Transactions on Microwave Theory and Techniques, Vol. 72, Núm. 6, pp. 3753-3758

  5. Hybrid AI-Thermal Model Trained via Monte Carlo Simulations to Study Self-Heating Effects

    IEEE Transactions on Electron Devices, Vol. 71, Núm. 10, pp. 5888-5894

  6. Monte Carlo Study of Gunn Oscillations in Geometrically Shaped Planar Gunn Diodes Based on Doped GaN: Influence of Geometry, Intervalley Energy, and Temperature

    IEEE Transactions on Electron Devices, Vol. 71, Núm. 10, pp. 5901-5907

  7. Multiport Square Law Detectors: Responsivity Matrix Model and Direct Determination of the Optimum Injection Regime

    IEEE Transactions on Microwave Theory and Techniques, Vol. 72, Núm. 10, pp. 6044-6048

  8. Small-Signal Equivalent Circuit Model as a Tool for Optimizing Millimeter-Wave Detection With FETs

    IEEE Transactions on Electron Devices, Vol. 71, Núm. 9, pp. 5225-5232

2023

  1. 2D MoS2 under switching field conditions: Study of high-frequency noise velocity fluctuations

    Applied Physics Letters, Vol. 123, Núm. 5

  2. A Deep Learning-Monte Carlo Combined Prediction of Side-Effect Impact Ionization in Highly Doped GaN Diodes

    IEEE Transactions on Electron Devices, Vol. 70, Núm. 6, pp. 2981-2987

  3. On the Practical Limitations for the Generation of Gunn Oscillations in Highly Doped GaN Diodes

    IEEE Transactions on Electron Devices, Vol. 70, Núm. 7, pp. 3447-3453

  4. THz Oscillation in Doped-GaN Based Planar Gunn Diode with the T-shape Channel

    2023 18th European Microwave Integrated Circuits Conference, EuMIC 2023

2022

  1. Monte Carlo analysis of thermal effects in the DC and AC performance of AlGaN/GaN HEMTs

    Solid-State Electronics, Vol. 193

  2. Optimization of the Epilayer Design for the Fabrication of Doped GaN Planar Gunn Diodes

    IEEE Transactions on Electron Devices, Vol. 69, Núm. 2, pp. 514-520

2021

  1. Non-linear thermal resistance model for the simulation of high power GaN-based devices

    Semiconductor Science and Technology, Vol. 36, Núm. 5

2019

  1. Design and fabrication of planar gunn nanodiodes based on doped GaN

    Asia-Pacific Microwave Conference Proceedings, APMC

  2. GaN-based SSD structure for THz applications

    Asia-Pacific Microwave Conference Proceedings, APMC