Publikationen in Zusammenarbeit mit Forschern von Imperial College London (15)

2023

  1. Enhancing resolution of terahertz imaging systems below the diffraction limit

    Optics and Laser Technology, Vol. 164

2022

  1. Electromagnetic Simulation to Determine Mesoscopic Dielectric Particle Parameters for Optimal Terajet Effect

    International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz

2021

  1. Electromagnetic Simulation of the Sub-THz Radiation Coupling to n-channel strained-silicon MODFETs

    International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz

  2. Imaging resolution enhancement using terajet effect at 0.3 THz

    Proceedings of SPIE - The International Society for Optical Engineering

  3. Numerical study of the coupling of sub-terahertz radiation to n-channel strained-silicon modfets

    Sensors (Switzerland), Vol. 21, Núm. 3, pp. 1-11

  4. Responsivity enhancement of a strained silicon field-effect transistor detector at 0.3 THz using the terajet effect

    Optics Letters, Vol. 46, Núm. 13, pp. 3061-3064

2020

  1. Effect of the front and back illumination on sub-terahertz detection using n-channel strained-silicon MODFETs

    Applied Sciences (Switzerland), Vol. 10, Núm. 17

2018

  1. Sub-THz Response of Strained-Silicon MODFETs

    Physica Status Solidi (A) Applications and Materials Science, Vol. 215, Núm. 4

  2. Sub-THz imaging using non-resonant HEMT detectors

    Sensors (Switzerland), Vol. 18, Núm. 2

2017

  1. Detection of terahertz radiation using submicron field effect transistors and their use for inspection applications

    Proceedings of SPIE - The International Society for Optical Engineering

  2. Experimental and theoretical studies of Sub-THz detection using strained-Si FETs

    Journal of Physics: Conference Series

  3. Sub-Micron Gate Length Field Effect Transistors as Broad Band Detectors of Terahertz Radiation

    FUNDAMENTAL AND APPLIED PROBLEMS OF TERAHERTZ DEVICES AND TECHNOLOGIES

2016

  1. Sub-micron gate length field effect transistors as broad band detectors of terahertz radiation

    International Journal of High Speed Electronics and Systems

2015

  1. Enhancement of sub-terahertz detection by drain-to-source biasing on strained silicon MODFET devices

    Journal of Physics: Conference Series

  2. Optimization of THz response of strained-Si MODFETs

    Physica Status Solidi (C) Current Topics in Solid State Physics, Vol. 12, Núm. 12, pp. 1401-1404