María Susana
Pérez Santos
Catedrática de Universidad
Sergio
García Sánchez
Profesor Permanente Laboral
Publicaciones en las que colabora con Sergio García Sánchez (13)
2023
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A Deep Learning-Monte Carlo Combined Prediction of Side-Effect Impact Ionization in Highly Doped GaN Diodes
IEEE Transactions on Electron Devices, Vol. 70, Núm. 6, pp. 2981-2987
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On the Practical Limitations for the Generation of Gunn Oscillations in Highly Doped GaN Diodes
IEEE Transactions on Electron Devices, Vol. 70, Núm. 7, pp. 3447-3453
2022
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Optimization of the Epilayer Design for the Fabrication of Doped GaN Planar Gunn Diodes
IEEE Transactions on Electron Devices, Vol. 69, Núm. 2, pp. 514-520
2021
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Non-linear thermal resistance model for the simulation of high power GaN-based devices
Semiconductor Science and Technology, Vol. 36, Núm. 5
2019
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Design and fabrication of planar gunn nanodiodes based on doped GaN
Asia-Pacific Microwave Conference Proceedings, APMC
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GaN-based SSD structure for THz applications
Asia-Pacific Microwave Conference Proceedings, APMC
2016
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Impact of substrate and thermal boundary resistance on the performance of AlGaN/GaN HEMTs analyzed by means of electro-thermal Monte Carlo simulations
Semiconductor Science and Technology, Vol. 31, Núm. 6
2015
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Evaluation of the thermal resistance in GaN-diodes by means of electro-thermal Monte Carlo simulations
Proceedings of the 2015 10th Spanish Conference on Electron Devices, CDE 2015
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Modelling of thermal boundary resistance in a GaN diode by means of electro-thermal Monte Carlo simulations
Journal of Physics: Conference Series
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Self-consistent electro-thermal simulations of AlGaN/GaN diodes by means of Monte Carlo method
Semiconductor Science and Technology, Vol. 30, Núm. 3
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Temperature and Surface Traps Influence on the THz Emission from InGaAs Diodes
Journal of Physics: Conference Series
2014
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Comparative Monte Carlo analysis of InP- and GaN-based Gunn diodes
Journal of Applied Physics, Vol. 115, Núm. 4
2013
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Numerical study of sub-millimeter Gunn oscillations in InP and GaN vertical diodes: Dependence on bias, doping, and length
Journal of Applied Physics, Vol. 114, Núm. 7