Tomás
González Sánchez
Catedrático de Universidad
Sylvain
Bollaert
Sylvain Bollaert-rekin lankidetzan egindako argitalpenak (32)
2018
-
Impact ionization and band-to-band tunneling in InxGa1-xAs PIN ungated devices: A Monte Carlo analysis
Journal of Applied Physics, Vol. 123, Núm. 3
2017
-
Monte Carlo analysis of III-V PIN diodes for tunnel-FETs and Impact Ionization-MOSFETs
2017 Spanish Conference on Electron Devices, CDE 2017
2015
-
Improvement of interfacial and electrical properties of Al2O3/ n-Ga0.47In0.53As for III-V impact ionization MOSFETs
Journal of Physics: Conference Series
-
Monte Carlo model for the analysis and development of III-V Tunnel-FETs and Impact Ionization-MOSFETs
Journal of Physics: Conference Series
2011
-
Evidence of surface charge effects in T-branch nanojunctions using microsecond-pulse testing
Nanotechnology, Vol. 22, Núm. 44
2010
-
Monte Carlo study of the dynamic performance of a 100-nm-gate InAlAs/InGaAs velocity modulation transistor
IEEE Transactions on Electron Devices, Vol. 57, Núm. 10, pp. 2572-2578
-
Three-terminal junctions operating as mixers, frequency doublers and detectors: A broad-band frequency numerical and experimental study at room temperature
Semiconductor Science and Technology, Vol. 25, Núm. 12
2009
-
Fabrication and fundamentals of operation of an InAlAs/InGaAs velocity modulation transistor
Applied Physics Letters, Vol. 94, Núm. 10
-
Frequency response of T-shaped three branch junctions as mixers and detectors
Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09
-
Influence of the branches width on the nonlinear output characteristics of InAlAs/InGaAs-based three-terminal junctions
Journal of Applied Physics, Vol. 105, Núm. 9
-
RF doubling and rectification in three-terminal junctions: Experimental characterization and Monte Carlo analysis
Journal of Physics: Conference Series
2008
-
Ballistic nanodevices for high frequency applications
International Journal of Nanotechnology, Vol. 5, Núm. 6-8, pp. 796-808
-
Comparison between the noise performance of double- and single-gate InP-based HEMTs
IEEE Transactions on Electron Devices, Vol. 55, Núm. 6, pp. 1535-1540
-
Monte Carlo simulation of surface charge effects in T-branch nanojunctions
Physica Status Solidi (C) Current Topics in Solid State Physics
2007
-
Ballistic nano-devices for high frequency applications
Thin Solid Films, Vol. 515, Núm. 10, pp. 4321-4326
-
Comparison between the dynamic performance of double- and single-gate AlInAs/InGaAs HEMTs
IEEE Transactions on Electron Devices, Vol. 54, Núm. 11, pp. 2815-2822
-
Influence of the surface charge on the operation of ballistic T-branch junctions: A self-consistent model for Monte Carlo simulations
Semiconductor Science and Technology, Vol. 22, Núm. 6, pp. 663-670
-
Monte Carlo comparison between InAlAs/ InGaAs double-gate and standard HEMTs
2007 Spanish Conference on Electron Devices, Proceedings
-
Noise behavior of InP-based double-gate and standard HEMTs: A comparison
AIP Conference Proceedings
-
Surface charge effects in ballistic T-branch nanojunctions
2007 Spanish Conference on Electron Devices, Proceedings