Sylvain Bollaert-rekin lankidetzan egindako argitalpenak (32)

2017

  1. Monte Carlo analysis of III-V PIN diodes for tunnel-FETs and Impact Ionization-MOSFETs

    2017 Spanish Conference on Electron Devices, CDE 2017

2008

  1. Ballistic nanodevices for high frequency applications

    International Journal of Nanotechnology, Vol. 5, Núm. 6-8, pp. 796-808

  2. Comparison between the noise performance of double- and single-gate InP-based HEMTs

    IEEE Transactions on Electron Devices, Vol. 55, Núm. 6, pp. 1535-1540

  3. Monte Carlo simulation of surface charge effects in T-branch nanojunctions

    Physica Status Solidi (C) Current Topics in Solid State Physics

2007

  1. Ballistic nano-devices for high frequency applications

    Thin Solid Films, Vol. 515, Núm. 10, pp. 4321-4326

  2. Comparison between the dynamic performance of double- and single-gate AlInAs/InGaAs HEMTs

    IEEE Transactions on Electron Devices, Vol. 54, Núm. 11, pp. 2815-2822

  3. Influence of the surface charge on the operation of ballistic T-branch junctions: A self-consistent model for Monte Carlo simulations

    Semiconductor Science and Technology, Vol. 22, Núm. 6, pp. 663-670

  4. Monte Carlo comparison between InAlAs/ InGaAs double-gate and standard HEMTs

    2007 Spanish Conference on Electron Devices, Proceedings

  5. Noise behavior of InP-based double-gate and standard HEMTs: A comparison

    AIP Conference Proceedings

  6. Surface charge effects in ballistic T-branch nanojunctions

    2007 Spanish Conference on Electron Devices, Proceedings