Tomás
González Sánchez
Catedrático de Universidad
Sergio
García Sánchez
Profesor Permanente Laboral
Publications by the researcher in collaboration with Sergio García Sánchez (22)
2024
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Analysis of the THz Responsivity of AlGaN/GaN HEMTs by Means of Monte Carlo Simulations
IEEE Transactions on Electron Devices, Vol. 71, Núm. 8, pp. 4556-4562
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Guidelines for Overcoming the Practical Limitations for the Fabrication of THz Sources with GaN Planar Gunn Diodes
IEEE Electron Devices Technology and Manufacturing Conference: Strengthening the Globalization in Semiconductors, EDTM 2024
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High-Frequency Microwave Detection with GaN HEMTs in the Subthreshold Regime
IEEE Transactions on Microwave Theory and Techniques, Vol. 72, Núm. 6, pp. 3753-3758
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Hybrid AI-Thermal Model Trained via Monte Carlo Simulations to Study Self-Heating Effects
IEEE Transactions on Electron Devices, Vol. 71, Núm. 10, pp. 5888-5894
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Monte Carlo Study of Gunn Oscillations in Geometrically Shaped Planar Gunn Diodes Based on Doped GaN: Influence of Geometry, Intervalley Energy, and Temperature
IEEE Transactions on Electron Devices, Vol. 71, Núm. 10, pp. 5901-5907
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Multiport Square Law Detectors: Responsivity Matrix Model and Direct Determination of the Optimum Injection Regime
IEEE Transactions on Microwave Theory and Techniques
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Small-Signal Equivalent Circuit Model as a Tool for Optimizing Millimeter-Wave Detection With FETs
IEEE Transactions on Electron Devices, Vol. 71, Núm. 9, pp. 5225-5232
2023
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A Deep Learning-Monte Carlo Combined Prediction of Side-Effect Impact Ionization in Highly Doped GaN Diodes
IEEE Transactions on Electron Devices, Vol. 70, Núm. 6, pp. 2981-2987
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On the Practical Limitations for the Generation of Gunn Oscillations in Highly Doped GaN Diodes
IEEE Transactions on Electron Devices, Vol. 70, Núm. 7, pp. 3447-3453
2022
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Monte Carlo analysis of thermal effects in the DC and AC performance of AlGaN/GaN HEMTs
Solid-State Electronics, Vol. 193
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Optimization of the Epilayer Design for the Fabrication of Doped GaN Planar Gunn Diodes
IEEE Transactions on Electron Devices, Vol. 69, Núm. 2, pp. 514-520
2021
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Non-linear thermal resistance model for the simulation of high power GaN-based devices
Semiconductor Science and Technology, Vol. 36, Núm. 5
2019
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Design and fabrication of planar gunn nanodiodes based on doped GaN
Asia-Pacific Microwave Conference Proceedings, APMC
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GaN-based SSD structure for THz applications
Asia-Pacific Microwave Conference Proceedings, APMC
2016
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Impact of substrate and thermal boundary resistance on the performance of AlGaN/GaN HEMTs analyzed by means of electro-thermal Monte Carlo simulations
Semiconductor Science and Technology, Vol. 31, Núm. 6
2015
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Evaluation of the thermal resistance in GaN-diodes by means of electro-thermal Monte Carlo simulations
Proceedings of the 2015 10th Spanish Conference on Electron Devices, CDE 2015
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Modelling of thermal boundary resistance in a GaN diode by means of electro-thermal Monte Carlo simulations
Journal of Physics: Conference Series
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Self-consistent electro-thermal simulations of AlGaN/GaN diodes by means of Monte Carlo method
Semiconductor Science and Technology, Vol. 30, Núm. 3
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Temperature and Surface Traps Influence on the THz Emission from InGaAs Diodes
Journal of Physics: Conference Series
2014
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Comparative Monte Carlo analysis of InP- and GaN-based Gunn diodes
Journal of Applied Physics, Vol. 115, Núm. 4