Tomás
González Sánchez
Catedrático de Universidad
Chalmers University of Technology
Gotemburgo, SueciaPublications in collaboration with researchers from Chalmers University of Technology (22)
2015
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Erratum: On the effect of δ-doping in self-switching diodes (Applied Physics Letters (2014) 105 (093505))
Applied Physics Letters
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Experimental analysis of shot-noise suppression in InGaAs/InAlAs recessed planar diodes at room temperature
2015 International Conference on Noise and Fluctuations, ICNF 2015
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Optimization and small-signal modeling of zero-bias InAs self-switching diode detectors
Solid-State Electronics, Vol. 104, pp. 79-85
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Shot-noise suppression effects in InGaAs planar diodes at room temperature
Journal of Physics: Conference Series
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Temperature and Surface Traps Influence on the THz Emission from InGaAs Diodes
Journal of Physics: Conference Series
2014
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Monte Carlo modelling of noise in advanced III–V HEMTs
Journal of Computational Electronics, Vol. 14, Núm. 1, pp. 72-86
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On the effect of δ-doping in self-switching diodes
Applied Physics Letters, Vol. 105, Núm. 9
2013
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200 GHz communication system using unipolar InAs THz rectifiers
International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz
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200 GHz communication system using unipolar InAs THz rectifiers
2013 38TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ)
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Room temperature THz detection and emission with semiconductor nanodevices
Proceedings of the 2013 Spanish Conference on Electron Devices, CDE 2013
2012
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Kink effect and noise performance in isolated-gate InAs/AlSb high electron mobility transistors
Semiconductor Science and Technology, Vol. 27, Núm. 6
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Monte Carlo studies of the intrinsic time-domain response of nanoscale three-branch junctions
Journal of Applied Physics, Vol. 111, Núm. 8
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Monte Carlo study of the noise performance of isolated-gate InAs/AlSb HEMTs
Semiconductor Science and Technology, Vol. 27, Núm. 1
2011
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Dynamic Monte Carlo study of isolated-gate InAs/AlSb HEMTs
Semiconductor Science and Technology, Vol. 26, Núm. 2
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Monte Carlo study of impact ionization and hole transport in InAs HEMTs with isolated gate
Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011
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Monte Carlo study of the dynamic performance of isolated-gate InAs/AlSb HEMTs
Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011
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Monte Carlo study of the noise performance of isolated-gate InAs HEMTs
Proceedings of the IEEE 21st International Conference on Noise and Fluctuations, ICNF 2011
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Monte Carlo study of the noise performance of isolated-gate InAs HEMTs
2011 21ST INTERNATIONAL CONFERENCE ON NOISE AND FLUCTUATIONS (ICNF)
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Monte carlo analysis of impact ionization in isolated-gate InAs/AlSb high electron mobility transistors
Acta Physica Polonica A
2010
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Isolated-gate InAs/AlSb HEMTs: A Monte Carlo study
Conference Proceedings - International Conference on Indium Phosphide and Related Materials